جامعة الاسراء- Al-Esraa Universiry - م.م رندة نائل عادل

	2023	International Journal of Nonlinear Analysis and Applications
The Planar Inverted-F antenna (PIFA) is becoming more popular in the new multi-band mobile phone industry for transceiver systems of wireless communication systems. The purpose of this paper is to design and implement a planar inverted-F antenna for wireless communication. This device can work in the S-band resonance frequency range. Because the antenna is a quarter wavelength, the antenna size and return loss are reduced. The practical results of the used antenna showed that the return loss is about 34.20 dB, the voltage Standing Wave Ratio(VSWR) is 1.18258, and the bandwidth is 220 MHz. Theoretically, the directivity, gain, and input impedance values were also calculated as 5.617 dB,5.247 dB, and 50 Ω, respectively. Therefore, the desired antenna is considered to perform well in terms of return loss and voltage. It can be utilized in Bluetooth, Wi-Fi, and Long Term Evolution (LTE) applications in fourth-generation cellular communications (4G).

	2022	Al-Nahrain Journal of Science
In this work, a simulation model of planar inverted F antenna (PIFA) will be presented with the radiating plate that has been connected to ground plane that has been accompanied by shortening plate and the FR4 substrate between ground plane and radiating plate. Where PIFA was built using computer simulation technology (CST) for the studio microwave (2019 release). The simulation model has been studied for return loss (S-parameter), bandwidth (BW), voltage standing wave ratio (VSWR), and input impedance (Zin) which are −21.875406dB, 301MHz, 1.1752855, and 50 , respectively. The simulation results showed that the PIFA component covers a wide frequency band ranging between 2.202 and 2.504 GHz, which can be used in Bluetooth, Wi-Fi, and Long Term Evolution (LTE) applications that are used in the fourth generation cellulares communications.

	2024	Silicon
The abilities of Ni-Si52, Ni-SiNT(6, 0), Ni-C52, Ni-B26N26, Ni-CNT (6, 0) and Ni-BNNT (6, 0) as catalyst of CO2-RR to CH4 are compared. The Eadoption and Eformation of Ni-Si52, Ni-SiNT(6, 0), Ni-C52, Ni-B26N26, Ni-CNT (6, 0) and Ni-BNNT (6, 0) are stable parameters. The Eadoption of CO2-RR on Ni-Si52, Ni-SiNT(6, 0), Ni-C52, Ni-B26N26, Ni-CNT (6, 0) and Ni-BNNT (6, 0) are − 3.34, -3.47, -5.42, -3.81, -3.99 and − 5.89 eV. The HCOOH, CO, HCOH, CH3OH and CH4 adsorption as important products for CO2-RR on Ni doped nanotubes an nanocages are examined. The Eformation of CO2-RR on Ni-Si52, Ni-SiNT(6, 0), Ni-C52, Ni-B26N26, Ni-CNT (6, 0) and Ni-BNNT (6, 0) are − 4.27, -4.39, -4.51, -4.87, -5.02 and − 4.92 eV. The CO2-RR mechanisms on Ni doped nanotubes and nanocages are examined. The overpotential of CO2-RR on Ni-Si52, Ni-SiNT(6, 0), Ni-C52, Ni-B26N26, Ni-CNT (6, 0) and Ni-BNNT (6, 0) are 0.338, 0.327, 0.331, 0.304, 0.295 and 0.296 V. The Overpotential of CO2-RR on Ni-C52, Ni-B26N26, Ni-CNT (6, 0) and Ni-BNNT (6, 0) are lower than metal catalysts. The Ni-Si52, Ni-SiNT(6, 0), Ni-C52, Ni-B26N26, Ni-CNT (6, 0) and Ni-BNNT (6, 0) is processed the CO2-RR.

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